Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

✍ Scribed by Wang, C. H.; Ke, C. C.; Lee, C. Y.; Chang, S. P.; Chang, W. T.; Li, J. C.; Li, Z. Y.; Yang, H. C.; Kuo, H. C.; Lu, T. C.; Wang, S. C.

• Book ID: 120365081
• Publisher: American Institute of Physics
• Year: 2010
• Tongue: English
• Weight: 763 KB
• Volume: 97
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.3531753