Improvement of light power and efficiency droop in GaN-based LEDs using graded InGaN hole reservoir layer

✍ Scribed by Lu, Taiping; Ma, Ziguang; Du, Chunhua; Fang, Yutao; Chen, Fangsheng; Jiang, Yang; Wang, Lu; Jia, Haiqiang; Chen, Hong

• Book ID: 121537204
• Publisher: Springer
• Year: 2014
• Tongue: English
• Weight: 809 KB
• Volume: 114
• Category: Article
• ISSN: 1432-0630
• DOI: 10.1007/s00339-014-8284-8