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Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes

✍ Scribed by Lin, Ray-Ming; Yu, Sheng-Fu; Chang, Shoou-Jinn; Chiang, Tsung-Hsun; Chang, Sheng-Po; Chen, Chang-Ho

Book ID: 120162407
Publisher: American Institute of Physics
Year: 2012
Tongue: English
Weight: 888 KB
Volume: 101
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4747802

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