๐”– Bobbio Scriptorium
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The Punch-Through Transistor with MOS Controled Gate

โœ Scribed by Wilamowski, B. M.


Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
387 KB
Volume
79
Category
Article
ISSN
0031-8965

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A new design of metal-oxide-semiconductor field effect transistor is presented, where both the gate resistance and the source-drain resistance are greatly reduced compared to conventional designs. The device employs Schottky source/drain contacts and a T-shaped gate. Characteristics are measured of