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The temperature characteristics of an H2S-sensitive Pd-gate MOS transistor

✍ Scribed by Zhang Weixin; Zhao Yibing

Publisher: Elsevier Science
Year: 1988
Weight: 642 KB
Volume: 15
Category: Article
ISSN: 0250-6874
DOI: 10.1016/0250-6874(88)85020-0

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