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The Polycenter Crystallization of Amorphous Silicon Layers at Pulse Annealing

✍ Scribed by Balandin, V. Yu. ;Dvurechenskii, A. V. ;Aleksandrov, L. N.

Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
360 KB
Volume
73
Category
Article
ISSN
0031-8965

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## Abstract The transient surface temperature and optical transmissivity profiles during the plasma annealing of amorphous silicon (a‐Si) on quartz substrate was studied using a radio‐frequency (rf) thermal plasma torch (TPT). The film crystallization promoted through solid‐phase crystallization (S