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The point defect structure and its transformation in As-implanted ZnO crystals

✍ Scribed by Yuan, Mengyao; Yuan, Hongyu; Jia, Quanjie; Chen, Yu; Jiang, Xiaoming; Wang, Huan-hua


Book ID
120411732
Publisher
Institute of Physics
Year
2012
Tongue
English
Weight
908 KB
Volume
45
Category
Article
ISSN
0022-3727

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## Abstract Ga~2~Te~3~ crystallizes in the zinc‐blende structure where one‐third of the cation sites are vacant. The dielectric properties of as‐grown Ga~2~Te~3~ crystals have been studied in the frequency range from 10^2^ to 10^9^ Hz. Below room temperature, the dielectric constant is around 20 an