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The physical origin of InAs quantum dots on GaAs(001)

✍ Scribed by Bottomley, D. J.


Book ID
121812808
Publisher
American Institute of Physics
Year
1998
Tongue
English
Weight
300 KB
Volume
72
Category
Article
ISSN
0003-6951

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To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dot