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Size, shape, and stability of InAs quantum dots on the GaAs(001) substrate

✍ Scribed by Wang, L.; Kratzer, P.; Moll, N.; Scheffler, M.


Book ID
115479753
Publisher
The American Physical Society
Year
2000
Tongue
English
Weight
146 KB
Volume
62
Category
Article
ISSN
1098-0121

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πŸ“œ SIMILAR VOLUMES


Strain and optical transitions in InAs q
✍ Y Fu; F Ferdos; M Sadeghi; Q.X Zhao; S.M Wang; A Larsson πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 218 KB

To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dot