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Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage

✍ Scribed by Kissel, H.; Müller, U.; Walther, C.; Masselink, W. T.; Mazur, Yu. I.; Tarasov, G. G.; Lisitsa, M. P.

Book ID
120539957
Publisher
The American Physical Society
Year
2000
Tongue
English
Weight
137 KB
Volume
62
Category
Article
ISSN
1098-0121

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Size quantization patterns in self-assem
Size quantization patterns in self-assembled InAs/GaAs quantum dots
✍ M. Colocci; F. Bogani; L. Carraresi; R. Mattolini; A. Bosacchi; S. Franchi; P. F 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 136 KB

Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spo