𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Size distribution effects on self-assembled InAs quantum dots

✍ Scribed by S. I. Jung; H. Y. Yeo; I. Yun; J. Y. Leem; I. K. Han; J. S. Kim; J. I. Lee

Book ID
106397681
Publisher
Springer US
Year
2007
Tongue
English
Weight
218 KB
Volume
18
Category
Article
ISSN
0957-4522

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Cracking self-assembled InAs quantum dot
Cracking self-assembled InAs quantum dots
✍ D.M. Bruls; J.W.A.M. Vugs; P.M. Koenraad; M.S. Skolnick; M. Hopkinson; J.H. Wolt πŸ“‚ Article πŸ“… 2001 πŸ› Springer 🌐 English βš– 145 KB
Size quantization patterns in self-assem
Size quantization patterns in self-assembled InAs/GaAs quantum dots
✍ M. Colocci; F. Bogani; L. Carraresi; R. Mattolini; A. Bosacchi; S. Franchi; P. F πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 136 KB

Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spo

Interband absorption on self-assembled I
Interband absorption on self-assembled InAs quantum dots
✍ C.S. DΓΌrr; R.J. Warburton; K. Karrai; J.P. Kotthaus; G. Medeiros-Ribeiro; P.M. P πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 113 KB

We have studied the interband excitations of an ensemble of InAs self-assembled quantum dots by detecting absorption directly in transmission experiments. The dots are embedded in a MISFET structure, allowing the dots' electron occupation to be controlled with a gate voltage. We show how Coulomb blo

Electronic coupling effects in self-asse
Electronic coupling effects in self-assembled InAs quantum dots
✍ R.J. Luyken; A. Lorke; M. Haslinger; B.T. Miller; M. Fricke; J.P. Kotthaus; G. M πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 120 KB

Electronic coupling effects in self-assembled InAs quantum dots are investigated using capacitance and far-infrared (FIR) spectroscopy. Coupling between different dot-layers is studied using capacitance spectroscopy on samples with double-layers of vertically aligned quantum dots. A strong electrost

Auger processes in InAs self-assembled q
Auger processes in InAs self-assembled quantum dots
✍ P.P Paskov; P.O Holtz; S Wongmanerod; B Monemar; J.M Garcia; W.V Schoenfeld; P.M πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 135 KB