Electronic coupling effects in self-assembled InAs quantum dots

✍ Scribed by R.J. Luyken; A. Lorke; M. Haslinger; B.T. Miller; M. Fricke; J.P. Kotthaus; G. Medeiros-Ribeiro; P.M. Petroff

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 120 KB
• Volume: 2
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(98)00144-1

✦ Synopsis

Electronic coupling effects in self-assembled InAs quantum dots are investigated using capacitance and far-infrared (FIR) spectroscopy. Coupling between different dot-layers is studied using capacitance spectroscopy on samples with double-layers of vertically aligned quantum dots. A strong electrostatic dot-dot interaction reveals itself in distinct shifts of the many particle ground state energy. The fact that the line widths of the FIR resonances are typically a factor of 3 narrower than expected from the inhomogenous broadening due to size fluctuations of the dots is attributed to lateral coupling between the dots within the plane of the dot ensemble.