Electronic characteristics of InAs self-assembled quantum dots
β Scribed by H.L Wang; S.L Feng; H.J Zhu; D Ning; F Chen; X.D Wang
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 105 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Electronic coupling effects in self-assembled InAs quantum dots are investigated using capacitance and far-infrared (FIR) spectroscopy. Coupling between different dot-layers is studied using capacitance spectroscopy on samples with double-layers of vertically aligned quantum dots. A strong electrost
We present selective photoluminescence and photoluminescence excitation spectroscopy on self-assembled quantum dots. These spectroscopic techniques reveal a large apparent 'Stokes' shift in In(Ga)As-Ga(Al)As self-assembled quantum dots. We demonstrate that the first two excited states observed in PL