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Electroluminescence from Individual InAs Self-Assembled Quantum Dots

✍ Scribed by Itskevich, I.E. ;Stoddart, S.T. ;Rybchenko, S.I. ;Tartakovskii, I.I. ;Eaves, L. ;Main, P.C. ;Henini, M. ;Parnell, S.


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
205 KB
Volume
178
Category
Article
ISSN
0031-8965

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We report investigations of the carrier escape from InAs self-assembled quantum dots. Based on measurements of the temperature-dependent photocurrent, the escape of photoexcited carriers is found to be dominated by the hole escape process. The main path for this hole escape was further clarified, wh