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A Carrier Escape Study from InAs Self-Assembled Quantum Dots by Photocurrent Measurement

✍ Scribed by W.-H. Chang; T.M. Hsu; C.C. Huang; S.L. Hsu; C.Y. Lai; N.T. Yeh; J.-I. Chyi

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
95 KB
Volume
224
Category
Article
ISSN
0370-1972

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✦ Synopsis

We report investigations of the carrier escape from InAs self-assembled quantum dots. Based on measurements of the temperature-dependent photocurrent, the escape of photoexcited carriers is found to be dominated by the hole escape process. The main path for this hole escape was further clarified, which is a thermally assisted hole tunneling, from the dot level to the GaAs barrier via the wetting layer as an intermediate state. The size selective tunneling effect and the carrier redistribution effect are discussed and compared with temperature-dependent photoluminescence measurements. W.-H. Chang et al.: A Carrier Escape Study from InAs Self-Assembled QDs

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