✦ LIBER ✦

Stark effect in single and vertically coupled InAs/GaAs self-assembled quantum dots

✍ Scribed by M.M. Sobolev; V.M. Ustinov; G.E. Cirlin

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 194 KB
Volume: 340-342
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2003.09.178

No coin nor oath required. For personal study only.

✦ Synopsis

Hole emission from single and vertically coupled quantum dots (SQD and VCQD) in InAs/GaAs p-n heterostructures under varied reverse bias and the influence exerted on this process by the Coulomb interaction between the quantum dots and point defects situated near the dots has been studied by capacitance-voltage (C2V ) and deep-level transient spectroscopes. Levels of the ground and excited states of the VCQD have been revealed. The electric-field-induced shift of the energy levels of these states is attributed to the quantum-confined Stark effect for SQD and VCQD. The Stark effect in the VCQD structure is stronger than that in the SQD.

📜 SIMILAR VOLUMES

Quantum Confined Stark Effect and Perman

Quantum Confined Stark Effect and Permanent Dipole Moment of InAs–GaAs Self-Assembled Quantum Dots

✍ Fry, P.W. ;Itskevich, I.E. ;Mowbray, D.J. ;Skolnick, M.S. ;Barker, J. ;O'Reilly, 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 256 KB 👁 2 views

Photocurrent Spectroscopy of InAs/GaAs S

Photocurrent Spectroscopy of InAs/GaAs Self-Assembled Quantum Dots

✍ P.W. Fry; D.J. Mowbray; I.E. Itskevich; M.S. Skolnick; J.A. Barker; E.P. O'Reill 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 130 KB 👁 2 views

Gain Characteristics of Self-Assembled I

Gain Characteristics of Self-Assembled InAs/GaAs Quantum Dots

✍ M. Arzberger; G. Böhm; M.C. Amann; G. Abstreiter 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB 👁 2 views

Anti-Stokes Photoluminescence in Self-As

Anti-Stokes Photoluminescence in Self-Assembled InAs/GaAs Quantum Dots

✍ Kammerer, C. ;Cassabois, G. ;Voisin, C. ;Delalande, C. ;Roussignol, Ph. ;G�rard, 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 66 KB 👁 2 views

Size quantization patterns in self-assem

Size quantization patterns in self-assembled InAs/GaAs quantum dots

✍ M. Colocci; F. Bogani; L. Carraresi; R. Mattolini; A. Bosacchi; S. Franchi; P. F 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 136 KB

Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spo

Self-Assembled InAs Quantum Dots in an I

Self-Assembled InAs Quantum Dots in an InGaAsN Matrix on GaAs

✍ A.Yu. Egorov; D. Bedarev; D. Bernklau; G. Dumitras; H. Riechert 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 90 KB 👁 2 views