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Annealing effects on faceting of InAs∕GaAs(001) quantum dots

✍ Scribed by Placidi, E.; Della Pia, A.; Arciprete, F.


Book ID
121451285
Publisher
American Institute of Physics
Year
2009
Tongue
English
Weight
464 KB
Volume
94
Category
Article
ISSN
0003-6951

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Strain and optical transitions in InAs q
✍ Y Fu; F Ferdos; M Sadeghi; Q.X Zhao; S.M Wang; A Larsson 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 218 KB

To investigate the strain characteristics of InAs quantum dots grown on (001) GaAs by solid source molecular beam epitaxy we have compared calculated transition energies with those obtained from photoluminescence measurements. Atomic force microscopy shows the typical lateral size of the quantum dot