## Abstract In this paper, the kink effect in scattering parameter __S__~22~ of RF power MOSFETs with drainβtoβspacer offset is explained quantitatively for the first time. Our results show that for RF power MOSFETs the output impedance can be represented by a βshiftedβ series RC circuit at low fre
β¦ LIBER β¦
The origin of the kink phenomenon of transistor scattering parameter S22
β Scribed by Lu, S.-S.; Chen, T.-W.; Chen, H.-C.; Meng, C.
- Book ID
- 114554021
- Publisher
- IEEE
- Year
- 2001
- Tongue
- English
- Weight
- 229 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0018-9480
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