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The observation of dislocations in BeO by transmission electron microscopy

✍ Scribed by R.S. Wilks

Publisher
Elsevier Science
Year
1964
Tongue
English
Weight
653 KB
Volume
14
Category
Article
ISSN
0022-3115

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πŸ“œ SIMILAR VOLUMES

Dislocations in silicon observed by high
Dislocations in silicon observed by high-voltage, high-resolution electron microscopy
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## Abstract Dislocations in deformed silicon crystals have been studied by high‐resolution electron microscopy with the axial illumination along the [110] direction using a 1 MV electron microscope. Extended 60 dislocations, Z‐shape faulted dipoles and stacking fault tetrahedra were observed in ato