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The nature of stacking fault pyramids in {100} epitaxial silicon

✍ Scribed by Ogden, R.


Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
232 KB
Volume
28
Category
Article
ISSN
0031-8965

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Stacking fault reduction in Silicon-on-I
✍ Gerold W. Neudeck; Keith D. Merritt; Jack P. Denton πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 420 KB

A method to fabricate silicon-on-insulator (SOI) device sized islands, using Epitaxiai Lateral Overgrowth (ELO) from the Selective Epitaxial Growth (SEG) of Silicon, has =96.3% stacking fault-free SO1 islands when SiO2 was used as the field insulator. When a nitrided thermal SiO 2 was used =99% of t