๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

A theoretical study of the electronic structure for twin stacking faults in silicon

โœ Scribed by Gong Xin-gao; Zheng Qing-qi; Han Ru-shan; Yang Wei-sheng

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
244 KB
Volume
62
Category
Article
ISSN
0038-1098

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

The electronic spectrum of silicon diflu
The electronic spectrum of silicon difluorid. A theoretical study
โœ Bernd Wirsam ๐Ÿ“‚ Article ๐Ÿ“… 1973 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 323 KB

Ab initio SCF and Cl calculations f@ the potential curves of the lower lying electronic states of the radical SiFz are carried out in order to obtain a theoretical description of the electronic spectrum of this system.

A study of the growth and shrinkage of s
A study of the growth and shrinkage of stacking faults in SIMOX
โœ G. Silvestre; R.A. Moore; A. Garcia; B. Aspar ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 357 KB

This paper presents the results of a study of the behaviour of stacking faults (SFs) resulting from specific sacrificial oxidation of separation by implanted oxygen (SIMOX) material in dry O,. This oxidation was chosen because growth of large SFs take place and these can be easily observed using a t