The &I pbotoelectroR spectrum of the divafent silicon compound SiF\* has been observed, and compared with the results of an INDO caicuiation, The assignments are correfstcd with those of a related series of moleroles.
The electronic spectrum of silicon difluorid. A theoretical study
โ Scribed by Bernd Wirsam
- Publisher
- Elsevier Science
- Year
- 1973
- Tongue
- English
- Weight
- 323 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0009-2614
No coin nor oath required. For personal study only.
โฆ Synopsis
Ab initio SCF and Cl calculations f@ the potential curves of the lower lying electronic states of the radical SiFz are carried out in order to obtain a theoretical description of the electronic spectrum of this system.
๐ SIMILAR VOLUMES
The infrared spectrum of the stretchmg fundamentals of SiF2 has been obtained at a resolution of 20.1 cm-\* using a FTIR spectrometer. The spectrum has been analysed usm g computer simulation based on a coupled hamlltonian for VI and vs. giking vr = 855.01 cm-l and "3 = 870.40 cm-t. The relative ma
The electronic spectrum of thiophene has been studied using multiconfiguration second-order perturbation theory and extended AN0 basis sets. The calculations comprise four singlet valence excited states and the 3s3p3d Rydberg series. The lowest triplet states were included and some n-n\* and n-ti st
The electronic spectrum of biphenyl in the energy range up to 6.0 eV has been studied using multiconfigurational secondorder perturbation theory (CASPT2) and a basis set of ANO type, including polarization functions on all carbon atoms. The calculated spectrum gives conclusive assignments to all val
The electronic spectrum of planar 2,2':5',2"-terthiophene has been studied using multiconfigurational second-order perturbation theory. Four valence states are located below the first dipole-allowed Rydberg state. The computed excitation energies (11B2:2.86 eV; 21A]: 3.71 eV; 21B2:4.44 eV; 31A~: 4.9