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The mechanisms of current transport and properties ofa-SiC:H/c-Si heterostructures

✍ Scribed by A. A. Sherchenkov; B. G. Budagyan; A. V. Mazurov

Book ID
110143661
Publisher
Springer
Year
2005
Tongue
English
Weight
98 KB
Volume
39
Category
Article
ISSN
1063-7826

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## Abstract The electrical transport properties of amorphous CN~__x__~/p‐Si heterostructures fabricated using reactive facing‐target sputtering were investigated systematically. The obvious rectifying effect is observed in the __I__–__V__ curves for the heterostructures fabricated at the nitrogen p