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Electrical and photoelectric properties ofa-Si:H layered films: The influence of thermal annealing

✍ Scribed by I. A. Kurova; N. N. Ormont; E. I. Terukov; I. N. Trapeznikova; V. P. Afanas’ev; A. S. Gudovskikh


Book ID
110126390
Publisher
Springer
Year
2001
Tongue
English
Weight
68 KB
Volume
35
Category
Article
ISSN
1063-7826

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Two groups of Mn films with different mass thicknesses were evaporated onto quartz-glass substrates under vacuum conditions (p = IO-' Pa). The Mn films of the first group were thermally annealed at a temperature of approximately 674 K for half an hour. The other group of the films were obtained with