Two groups of Mn films with different mass thicknesses were evaporated onto quartz-glass substrates under vacuum conditions (p = IO-' Pa). The Mn films of the first group were thermally annealed at a temperature of approximately 674 K for half an hour. The other group of the films were obtained without thermal annealing.
After deposition, the rime and temperature dependences of resistance were measured in vacua in situ, and activation energies of resistance were determined for both groups. It has been found that during thermal annealing, rhe resistance of thicker films increases with rime. Hecrricai properties of the anneaied Mn films differ from those of the films without annealing. The films of the first group reach higher resistance and activation energies of resistance values. In order to protect them from oxidation and recrystallization during thermal annealing, the Mn films were covered with dielectric MgF, layers after deposition.
The double films (Mn+MgF,I resistances did nor change with time and temperature; these films were stable. The results of structural examinations (electron diffraction patterns and microstructures) are also presented.