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The mechanism of anisotropic island growth in molecular-beam epitaxy of Si on Si(001)

✍ Scribed by V.M. Benadov; D.N. Mukhin

Publisher
Elsevier Science
Year
1992
Weight
71 KB
Volume
278
Category
Article
ISSN
0167-2584

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Epitaxial growth of Bi2Sr2CuOx films ont
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We have studied the epitaxial growth of Bi Sr CuO superconductor films onto a Si 001 substrate using a double buffer 2 2 x Ε½ . layer consisting of SrTiO and SrO by molecular beam epitaxy MBE . The Bi Sr CuO films are grown by a 3 2 2 x Ε½ . co-evaporation method with an oxygen radical source. The Bi