Epitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy

✍ Scribed by T Tambo; T Arakawa; A Shimizu; S Hori; C Tatsuyama

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 778 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00073-8

✦ Synopsis

We have studied the epitaxial growth of Bi Sr CuO superconductor films onto a Si 001 substrate using a double buffer 2 2 x Ž . layer consisting of SrTiO and SrO by molecular beam epitaxy MBE . The Bi Sr CuO films are grown by a 3 2 2 x

Ž . co-evaporation method with an oxygen radical source. The Bi Sr CuO films do not grow directly on a Si 001 substrate 2 2 x Ž . under the same condition as the epitaxial growth on a commercial SrTiO 001 substrate. Also, the Bi Sr CuO films do 3 2 2 x Ž . Ž . Ž . not grow on an MBE-grown SrO 001 filmrSi 001 substrate, but grow on an MBE-grown SrTiO 001 filmrSrO 3 Ž . Ž . Ž . Ž . Ž . 001 rSi 001 . The epitaxial growth of the Bi Sr CuO films on SrTiO 001 rSrO 001 rSi 001 system is compared 2 2 x 3 Ž . Ž . with that of the Bi Sr CuO films on a commercial SrTiO 001 substrate. The X-ray diffraction XRD pattern shows the 2 2 x 3 Ž . Ž . growth of Bi Sr CuO 001 on SrTiO rSrOrSi. The reflection high-energy electron diffraction RHEED of the 2 2 x 3

Ž . Bi Sr CuO film grown on a SrTiO 001 film shows a streak pattern with vague rings. The streak pattern is partially 2 2

x 3

Ž . similar to an RHEED pattern of Bi Sr CuO grown on a commercial SrTiO 001 substrate. q 2000 Elsevier Science B.V. 2 2 x 3

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