𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The Landé-g factor in heterostructures

✍ Scribed by J. L. Cardoso; P. Pereyra

Book ID
104557270
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
90 KB
Volume
2
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electron Landé factor in semiconductor q
Electron Landé factor in semiconductor quantum wires
✍ F.E. López; E. Reyes-Gómez; L.E. Oliveira 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 120 KB

The properties of the conduction-electron g k factor in semiconductor GaAs-Ga 1Àx Al x As quantum-well wires under magnetic fields applied along the wire axis are presented. The electron g k factor is obtained as a function of both the applied magnetic field and transversal area of the wire. Calcula

On the effective Landé factor of magneti
On the effective Landé factor of magnetic lines
✍ Egidio Landi Degl'Innocenti 📂 Article 📅 1982 🏛 Springer 🌐 English ⚖ 220 KB

The effective Land6 factor, ~, of a magnetic sensitive line can be calculated by means of the experimental Land6 factors of the lower and upper levels of the atomic transition. Values of g for several iron lines of the solar spectrum are calculated and compared with the approximate values based on t

Orientation dependence of the Landé fact
Orientation dependence of the Landé factor in an inversion layer
✍ M. Kornexl 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 295 KB

The magneto-optical properties of a biased semiconductor inversion layer (GaAlAs-GaAs) are calculated for applied magnetic fields in the Faraday and Voigt configurations. Electric and magnetic dipole transitions for spin flip in an n-type inversion layer are investigated. Resulting line shapes and t