Orientation dependence of the Landé factor in an inversion layer
✍ Scribed by M. Kornexl
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 295 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
The magneto-optical properties of a biased semiconductor inversion layer (GaAlAs-GaAs) are calculated for applied magnetic fields in the Faraday and Voigt configurations. Electric and magnetic dipole transitions for spin flip in an n-type inversion layer are investigated. Resulting line shapes and the orientation dependence of the effective Landé factor g * are discussed. The electric potential in the inversion layer is calculated self-consistently.
📜 SIMILAR VOLUMES
Let G be a graph with n nodes, e edges, chromatic number /, and girth g. In an acyclic orientation of G, an arc is dependent if its reversal creates a cycle. It is well known that if /<g, then G has an acyclic orientation without dependent arcs. Edelman showed that if G is connected, then every acyc