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Orientation dependence of the Landé factor in an inversion layer

✍ Scribed by M. Kornexl


Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
295 KB
Volume
29
Category
Article
ISSN
0749-6036

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✦ Synopsis


The magneto-optical properties of a biased semiconductor inversion layer (GaAlAs-GaAs) are calculated for applied magnetic fields in the Faraday and Voigt configurations. Electric and magnetic dipole transitions for spin flip in an n-type inversion layer are investigated. Resulting line shapes and the orientation dependence of the effective Landé factor g * are discussed. The electric potential in the inversion layer is calculated self-consistently.


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