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Landé g factors in elongated InAs/GaAs self-assembled quantum dots

✍ Scribed by Weidong Sheng


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
162 KB
Volume
40
Category
Article
ISSN
1386-9477

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Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spo