Electron Landé factor in semiconductor quantum wires

✍ Scribed by F.E. López; E. Reyes-Gómez; L.E. Oliveira

• Book ID: 104051483
• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 120 KB
• Volume: 39
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2008.01.030

✦ Synopsis

The properties of the conduction-electron g k factor in semiconductor GaAs-Ga 1Àx Al x As quantum-well wires under magnetic fields applied along the wire axis are presented. The electron g k factor is obtained as a function of both the applied magnetic field and transversal area of the wire. Calculations are performed by taking into account the non-parabolicity and anisotropy of the conduction band via the Ogg-McCombe Hamiltonian for both cylindrical and rectangular quantum-well wires. The conduction-electron Landef actor is shown to be a growing function of the applied magnetic field as well as dependent on the shape of the transversal section of the wire.