Electron Lande g-factor in GaAs/AlxGa1−xAs quantum wires
✍ Scribed by A.M. Babayev; Ö. Mercan; S. Tez
- Book ID
- 104085474
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 327 KB
- Volume
- 41
- Category
- Article
- ISSN
- 1386-9477
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The properties of the conduction-electron g k factor in semiconductor GaAs-Ga 1Àx Al x As quantum-well wires under magnetic fields applied along the wire axis are presented. The electron g k factor is obtained as a function of both the applied magnetic field and transversal area of the wire. Calcula
Ballistic electron emission microscopy (BEEM) was used to study laterally patterned GaAs/Al x Ga 1-x As heterostructures. The measurements were carried out at room temperature in air as well as in liquid helium. Wet chemically etched quantum wires were identified both in topographic and BEEM current