𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electron Lande g-factor in GaAs/AlxGa1−xAs quantum wires

✍ Scribed by A.M. Babayev; Ö. Mercan; S. Tez


Book ID
104085474
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
327 KB
Volume
41
Category
Article
ISSN
1386-9477

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Electron Landé factor in semiconductor q
✍ F.E. López; E. Reyes-Gómez; L.E. Oliveira 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 120 KB

The properties of the conduction-electron g k factor in semiconductor GaAs-Ga 1Àx Al x As quantum-well wires under magnetic fields applied along the wire axis are presented. The electron g k factor is obtained as a function of both the applied magnetic field and transversal area of the wire. Calcula

BEEM studies on GaAs/AlxGa1–xAs quantum
✍ C. Eder; J. Smoliner; G. Strasser; E. Gornik 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 259 KB

Ballistic electron emission microscopy (BEEM) was used to study laterally patterned GaAs/Al x Ga 1-x As heterostructures. The measurements were carried out at room temperature in air as well as in liquid helium. Wet chemically etched quantum wires were identified both in topographic and BEEM current