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BEEM studies on GaAs/AlxGa1–xAs quantum wire structures

✍ Scribed by C. Eder; J. Smoliner; G. Strasser; E. Gornik

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
259 KB
Volume
20
Category
Article
ISSN
0749-6036

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✦ Synopsis

Ballistic electron emission microscopy (BEEM) was used to study laterally patterned GaAs/Al x Ga 1-x As heterostructures. The measurements were carried out at room temperature in air as well as in liquid helium. Wet chemically etched quantum wires were identified both in topographic and BEEM current imaging. We find that the BEEM current is enhanced if ballistic electrons are injected directly into the quantum wire. The subsurface Al x Ga 1-x As barrier influences the collector current by determining the BEEM current threshold and by influencing the Fermi level pinning position.

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