Trifluoro-t-butoxy radicals have been generated by reacting fluorine with 2-trifluoromethyl propan-2-01: Over the temperature range 361-600 K the trifluoro-t-butoxy radical decomposes exclusively by loss of the -CF, group [reaction ( -2)] rather than by loss of -CH, group [reaction ( -111: The lim
The kinetics of the gas phase decomposition reactions of the hexafluoro-t-butoxy radical
โ Scribed by Roger M. Drew; J. Alistair Kerr
- Publisher
- John Wiley and Sons
- Year
- 1983
- Tongue
- English
- Weight
- 392 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0538-8066
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โฆ Synopsis
Hexafluoro-t -butoxy radicals have been generated by reacting fluorine with hexafluoro-2-methyl isopropanol:
Over the temperature range of 406-600 K the hexafluoro-t-butoxy radical decomposes exclusively by loss of a CF3 radical [reaction (-2)] rather than by loss of a CH3 radical [reaction (-111:
The limits of detectability of the product CF3COCF3, by gas-chromatographic analysis, place a lower limit on the ratio k-Zlk-1 of -80. The implications of this finding in relation to the reverse radical addition reactions to the carbonyl group are briefly discussed.
A thermochemical kinetic calculation reveals a discrepancy in the kinetics and thermodynamics of the decomposition and formation reactions of the related t-butoxy radical:
( 5 ) (-5) (CH3)aCO + (CH3)zCO + C H 3
๐ SIMILAR VOLUMES
s-Butoxy radicals have been generated by reacting fluorine with s-butanol: Over the temperature range 398.6 to 493.3 K the s-butoxy radical decomposes by two different pathways to yield acetaldehyde and propionaldehyde, acetaldehyde being the major product: (1) The ratio k , / k z was found to be
The recent paper of Choo and Benson [l] prompted us to communicate our most recent results for the gas-phase decomposition of the t-butoxy radical. The method we have used was to decompose ditertiary butyl peroxide (-10-5M) in the presence of nitric oxide (-10-5M) and inert gas (25-1500 torr) in a s
By photolyzing azomethane over the temperature range 331-491 K in the presence of trifluoroacetone the kinetics of the addition reaction (11, CH3 + CF3COCH3 + CF,C(O)(CH, )z have been studied. Detailed analyses have shown that the principal product of the adduct radical, CF3C(0)(CH3)2, is CH,COCH, f
The homogeneous gas-phase decomposition kinetics of methylsilane and methylsilane-d3 have been investigated by the comparative-rate-single-pulse shock-tube technique a t total pressures of 4700 torr in the 1125-1250 K temperature range. Three primary processes occur: CH:$iH3 -CH3SiH + HS (l), CH3SiH
By allowing the t-butoxy radical to decompose in the presence of nitric oxide, it has been possible to determine rate constants for decomposition by the measurements of the relative rates (2) and (3): The value of k3(x) has been determined in the presence of several inert gases (CF,, SF,, N,, and A