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The gas-phase decomposition of methylsilane. Part III. Kinetics

✍ Scribed by B. A. Sawrey; H. E. O'Neal; M. A. Ring; D. Coffey Jr.


Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
444 KB
Volume
16
Category
Article
ISSN
0538-8066

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✦ Synopsis


The homogeneous gas-phase decomposition kinetics of methylsilane and methylsilane-d3 have been investigated by the comparative-rate-single-pulse shock-tube technique a t total pressures of 4700 torr in the 1125-1250 K temperature range. Three primary processes occur: CH:$iH3 -CH3SiH + HS (l), CH3SiH3 -CH4 + SiHz (2), and CH3SiH3 -CHa = SiH2 + H2 (3). The high-pressure rate constants for the primary processes in CH3SiH3 obtained by RRKM calculations are log ( k l + k s ) (s-l) = 15.2 -64,780 cal/@ and log kz (s-l) = 14.50 -67,600 f 2800 cal/O. For CH3SiD3 these same rate constants are log k l (s-l) = 14.99 -64,700 call@, log k2 (s-l) = 14.68 -66,700 f 2000 cal/O, and log k:$ (s-l) = 14.3 -64,700 cal/ 0.


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