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The interface between silicon and a high-k oxide

✍ Scribed by Först, Clemens J.; Ashman, Christopher R.; Schwarz, Karlheinz; Blöchl, Peter E.


Book ID
109892585
Publisher
Nature Publishing Group
Year
2004
Tongue
English
Weight
240 KB
Volume
427
Category
Article
ISSN
0028-0836

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The interface between silicon and a high
✍ Först, Clemens J.; Ashman, Christopher R.; Schwarz, Karlheinz; Blöchl, Peter E. 📂 Article 📅 2004 🏛 Nature Publishing Group 🌐 English ⚖ 240 KB

The ability of the semiconductor industry to continue scaling microelectronic devices to ever smaller dimensions (a trend known as Moore's Law) is limited by quantum mechanical effects: as the thickness of conventional silicon dioxide (SiO(2)) gate insulators is reduced to just a few atomic layers,