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Observation of high interface state densities at the silicon/oxide interface for low doped polysilicon/oxide/silicon capacitor structures

✍ Scribed by C Leveugle; P.K Hurley; A Mathewson; S Moran; E Sheehan; A Kalnitsky


Book ID
108362285
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
188 KB
Volume
38
Category
Article
ISSN
0026-2714

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Impact of the polysilicon doping level o
✍ C. Leveugle; P.K. Hurley; A. Mathewson; S. Moran; E. Sheehan; A. Kalnitsky; A. L πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 305 KB

In this work, new observations noted in the capacitance-voltage (CV) behaviour of polysilicon/oxide/silicon capacitor structures are reported. As the doping concentration in the polysilicon layer is reduced, anomalous CV characteristics are observed, which are not related to depletion into the polys