Impact of the polysilicon doping level o
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C. Leveugle; P.K. Hurley; A. Mathewson; S. Moran; E. Sheehan; A. Kalnitsky; A. L
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Article
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1997
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Elsevier Science
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English
β 305 KB
In this work, new observations noted in the capacitance-voltage (CV) behaviour of polysilicon/oxide/silicon capacitor structures are reported. As the doping concentration in the polysilicon layer is reduced, anomalous CV characteristics are observed, which are not related to depletion into the polys