𝔖 Bobbio Scriptorium
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Boundary condition for the interface between silicon and silicon oxide

✍ Scribed by Kim, J. U.; Lee, Hong H.


Book ID
121498934
Publisher
The American Physical Society
Year
2000
Tongue
English
Weight
87 KB
Volume
62
Category
Article
ISSN
1098-0121

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πŸ“œ SIMILAR VOLUMES


The interface between silicon and a high
✍ FΓΆrst, Clemens J.; Ashman, Christopher R.; Schwarz, Karlheinz; BlΓΆchl, Peter E. πŸ“‚ Article πŸ“… 2004 πŸ› Nature Publishing Group 🌐 English βš– 240 KB
The interface between silicon and a high
✍ FΓΆrst, Clemens J.; Ashman, Christopher R.; Schwarz, Karlheinz; BlΓΆchl, Peter E. πŸ“‚ Article πŸ“… 2004 πŸ› Nature Publishing Group 🌐 English βš– 240 KB

The ability of the semiconductor industry to continue scaling microelectronic devices to ever smaller dimensions (a trend known as Moore's Law) is limited by quantum mechanical effects: as the thickness of conventional silicon dioxide (SiO(2)) gate insulators is reduced to just a few atomic layers,