𝔖 Bobbio Scriptorium
✦   LIBER   ✦

The InP/Sb interface studied by Raman scattering

✍ Scribed by D. Zahn; N. Esser; W. Pletschen; J. Geurts; W. Richter

Publisher
Elsevier Science
Year
1986
Weight
84 KB
Volume
168
Category
Article
ISSN
0167-2584

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Raman scattering studies of the GaAs nat
Raman scattering studies of the GaAs native oxide interface
πŸ“‚ Article πŸ“… 1978 πŸ› Elsevier Science 🌐 English βš– 176 KB

together with tight-binding calculations. We have considered several different types of structural models, including the relaxation model in which surface Ga atoms move into and As atoms move out of, the surface by an amount such that the plane through the nearestneighbour Ga and As atoms makes a ti

Arsenic incorporation in InP epitaxial l
Arsenic incorporation in InP epitaxial layers: a Raman scattering study
✍ L.G. Quagliano; B. Jusserand; F. Mollot; D. Orani πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 84 KB

We use Raman spectroscopy to investigate the interaction of epitaxial InP surfaces with arsenic during gas-source molecular beam epitaxy. The analysis of the Raman data reveals an arsenic incorporation due to phosphorus replacement by arsenic in the InP surface. A strong temperature dependence of th

Study of Ti/InP interfaces by PES
Study of Ti/InP interfaces by PES
✍ Ji Mingrong; Wu Jianxin; Ma Maosheng; Liu Xianming; Li Baoqi; Xu Zhengjia πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 148 KB