Raman scattering studies of the GaAs native oxide interface

• Publisher: Elsevier Science
• Year: 1978
• Tongue: English
• Weight: 176 KB
• Volume: 28
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(78)80691-5

✦ Synopsis

together with tight-binding calculations. We have considered several different types of structural models, including the relaxation model in which surface Ga atoms move into and As atoms move out of, the surface by an amount such that the plane through the nearestneighbour Ga and As atoms makes a tilt angle, er, with the corresponding plane in the ideal surface while bond lengths remain constant. We show that this model with a tilt angle BT N 19" in contrast with Br -35" as previously concluded from (LEED) low-energy electrondiffraction analysis, adequately accounts for the photoemission spectroscopy data. A description of the nature of surface states including the local s-and p-orbital densities of states and dispersion relations is given for this relaxation model.