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Interface structure of GaAs/AlAs superlattices grown on (113) surfaces: Raman scattering studies

โœ Scribed by G. Armelles; P. Castrillo; P.D. Wang; C.M. Sotomayor Torres; N.N. Ledentsov; N.A. Bert

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
459 KB
Volume
94
Category
Article
ISSN
0038-1098

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๐Ÿ“œ SIMILAR VOLUMES

Raman study of confined TO phonons in Ga
Raman study of confined TO phonons in GaAs/AlAs superlattices grown on GaAs (311)A and B surfaces
โœ V.A. Volodin; M.D. Efremov; V.V. Preobrazhenskii; B.R. Semyagin; V.V. Bolotov ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 116 KB

The use of Raman scattering in different polarization geometries makes it possible to observe the splitting of transverse optical (TO) phonon modes confined in GaAs/AlAs superlattices grown on faceted GaAs (311)A surfaces. The frequencies of TO modes with atomic displacements in the direction along