Raman spectroscopic studies of ZnSe/GaAs interfaces

✍ Scribed by T. A. El-Brolossy; H. Talaat

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 128 KB
• Volume: 39
• Category: Article
• ISSN: 0377-0486
• DOI: 10.1002/jrs.1821

✦ Synopsis

Abstract

ZnSe/semi‐insulating GaAs interfaces were studied by observing photogenerated plasmon–LO (PPL) coupled modes by nonresonant micro‐Raman spectroscopy. The effect of the carriers generated by the focused laser beam was investigated for a series of different thicknesses of ZnSe epitaxial layers. The PPL mode in GaAs was observed in the micro‐Raman spectra for all samples, but with different magnitude. The plasma is believed to be an electron gas as a result of the negative nature of the interfacial region that contains predominantly hole traps. The free carrier concentration is estimated to be > 10^18^ cm^−3^ and their lifetime ∼0.1 ns. This relatively long lifetime suggests that the ZnSe/GaAs interface has to be of high structural quality leading to a low recombination velocity. ZnSe/GaAs heterostructures of less crystalline quality (as determined by resonant Raman measurements) shows the effect of photogenerated carriers only to lesser extent. Copyright © 2007 John Wiley & Sons, Ltd.