✦ LIBER ✦

Raman studies of phosphorus-doped ZnSe

✍ Scribed by K. Nakano; P.J. Boyce; J.J. Davies; D. Wolverson

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 394 KB
Volume: 117
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(92)90770-j

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Acceptor centers in phosphorus doped ZnS

Acceptor centers in phosphorus doped ZnSe crystals

✍ W.C. Holton; A.R. Reinberg; R.K. Watts; M. De Wit 📂 Article 📅 1970 🏛 Elsevier Science 🌐 English ⚖ 615 KB

Raman spectroscopic studies of ZnSe/GaAs

Raman spectroscopic studies of ZnSe/GaAs interfaces

✍ T. A. El-Brolossy; H. Talaat 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 128 KB

## Abstract ZnSe/semi‐insulating GaAs interfaces were studied by observing photogenerated plasmon–LO (PPL) coupled modes by nonresonant micro‐Raman spectroscopy. The effect of the carriers generated by the focused laser beam was investigated for a series of different thicknesses of ZnSe epitaxial l

Raman scattering studies in phosphorus i

Raman scattering studies in phosphorus implanted and laser annealed boron doped Si

✍ G. Contreras; M. Cardona; A. Axmann 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 244 KB

Photoluminescence excitation spectroscop

Photoluminescence excitation spectroscopic studies of nitrogen doped ZnSe

✍ G.D. Brownlie; Z. Zhu; G. Horsburgh; T. Steele; P.J. Thompson; J.M. Wallace; K.A 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 234 KB

Raman scattering studies of the ZnSe/GaA

Raman scattering studies of the ZnSe/GaAs interface

✍ X. B. Zhang; H. L. Tsoi; K. L. Ha; S. K. Hark 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 202 KB

High pressure X-ray and Raman study of Z

High pressure X-ray and Raman study of ZnSe

✍ Raymond G. Greene; Huan Luo; Arthur L. Ruoff 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 368 KB