Arsenic incorporation in InP epitaxial layers: a Raman scattering study

✍ Scribed by L.G. Quagliano; B. Jusserand; F. Mollot; D. Orani

• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 84 KB
• Volume: 2
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(98)00168-4

✦ Synopsis

We use Raman spectroscopy to investigate the interaction of epitaxial InP surfaces with arsenic during gas-source molecular beam epitaxy. The analysis of the Raman data reveals an arsenic incorporation due to phosphorus replacement by arsenic in the InP surface. A strong temperature dependence of this incorporation process has been observed. The reversibility of As incorporation in the InP surface after a subsequent exposure to P has been also investigated and a temperature dependence of the disappearance of the InAs vibrations in the Raman spectra is demonstrated. This study demonstrates that Raman scattering is very sensitive to a thin layer at the surface and, when compared to other structural analyses such as RHEED, provides detailed information on the first stage of heteroepitaxy of semiconductors.