𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Raman scattering study of a GaAsN epitaxial layer

✍ Scribed by G.Y. Yu; Z.X. Shen; L. Liu; W.X. Sun

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
111 KB
Volume
4
Category
Article
ISSN
1369-8001

No coin nor oath required. For personal study only.

✦ Synopsis

Raman scattering study of a dilute GaAsN epitaxy layer was carried out at variable temperature and pressure. The localization due to the presence of the N atoms is responsible for the small correlation length in the GaAsN alloy, which is also evident from the broadening and asymmetry of the LO mode of the GaAs-like Raman band. The temperature dependence of the correlation length was analyzed. Nitrogen-induced localization also has a strong influence on the pressure dependence of the Born's effective dynamic charge e Γƒ:

πŸ“œ SIMILAR VOLUMES

Arsenic incorporation in InP epitaxial l
Arsenic incorporation in InP epitaxial layers: a Raman scattering study
✍ L.G. Quagliano; B. Jusserand; F. Mollot; D. Orani πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 84 KB

We use Raman spectroscopy to investigate the interaction of epitaxial InP surfaces with arsenic during gas-source molecular beam epitaxy. The analysis of the Raman data reveals an arsenic incorporation due to phosphorus replacement by arsenic in the InP surface. A strong temperature dependence of th

Raman Scattering Studies on the Thin Gra
Raman Scattering Studies on the Thin Graded Band Gap AlGaAs Hetero-Epitaxial Layer
✍ K. Jeganathan; V. Ramakrishnan; J. Kumar πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 81 KB πŸ‘ 2 views

Thin graded hetero-epitaxial AlGaAs layer has been grown from the undersaturated Liquid Phase Epitaxial (LPE) technique. The grown layers have been characterized using Laser Raman scattering studies. The peak position and intensity ratio of GaAs and AlAs like LO phonon frequencies have been measured