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Raman scattering study of GaP:N epitaxial layers

✍ Scribed by V. Vorlíček; I. Gregora; V. Riede; H. Neumann


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
866 KB
Volume
49
Category
Article
ISSN
0022-3697

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Thin graded hetero-epitaxial AlGaAs layer has been grown from the undersaturated Liquid Phase Epitaxial (LPE) technique. The grown layers have been characterized using Laser Raman scattering studies. The peak position and intensity ratio of GaAs and AlAs like LO phonon frequencies have been measured