Raman Scattering Studies on the Thin Gra
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K. Jeganathan; V. Ramakrishnan; J. Kumar
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Article
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1999
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John Wiley and Sons
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English
⚖ 81 KB
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Thin graded hetero-epitaxial AlGaAs layer has been grown from the undersaturated Liquid Phase Epitaxial (LPE) technique. The grown layers have been characterized using Laser Raman scattering studies. The peak position and intensity ratio of GaAs and AlAs like LO phonon frequencies have been measured