Photoexcited and forbidden LO mode raman scattering in epitaxial InP (001) layers
✍ Scribed by J.A.C. Bland
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 262 KB
- Volume
- 4
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
We report Raman measurements of forbidden scattering from InP epitaxial layers incorporated into InP/GaInAa!InP(OOl) quantum well structures. At low power densities the InP LO phonon signal collapses completely in the forbidden symmetry configuration for undoped samples. We present evidence that the forbidden LO scattering strength is related to the photoexcited carrier density in the InP overlayer: the forbidden scattering mechanism is assumed to be associated with the Frolich interaction arising from the surface electric field in the depletion region. In doped samples (N,-5 x lOI7 cm-3) photoexcitation augments the residual carrier density and the coupled plasmon -LO phonon L+ mode is observed.