The influence of Ti capping layers on CoSi2 formation
β Scribed by C Detavernier; R.L Van Meirhaeghe; F Cardon; R.A Donaton; K Maex
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 161 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0167-9317
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π SIMILAR VOLUMES
In this work we study the phase transition of Co/poly-Si layers capped with Ti or TiN films. Silicide reaction has been performed by isothermal annealing in the temperature range between 420 and 510 β’ C and studied by measuring the sheet resistance during time. The time interval associated to the Co
CdSe/ZnSe quantum structures grown on GaAs(001) by molecular beam epitaxy (MBE) were investigated by temperature dependent, time-resolved photoluminescence spectroscopy. A strong influence of the conditions during cap layer growth on the optical properties was found. Using conventional MBE excitons