Influence of Capping Conditions on CdSe/ZnSe Quantum Dot Formation

✍ Scribed by T. Passow; K. Leonardi; H. Heinke; D. Hommel; J. Seufert; G. Bacher; A. Forchel

• Publisher: John Wiley and Sons
• Year: 2002
• Tongue: English
• Weight: 86 KB
• Volume: 229
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200201)229:1<497::aid-pssb497>3.0.co;2-t

✦ Synopsis

CdSe/ZnSe quantum structures grown on GaAs(001) by molecular beam epitaxy (MBE) were investigated by temperature dependent, time-resolved photoluminescence spectroscopy. A strong influence of the conditions during cap layer growth on the optical properties was found. Using conventional MBE excitons are localized only at temperatures below 100 K. In contrast, real quantum dot formation occurs using migration enhanced epitaxy for overgrowth of CdSe by ZnSe.