Influence of Capping Conditions on CdSe/
β
T. Passow; K. Leonardi; H. Heinke; D. Hommel; J. Seufert; G. Bacher; A. Forchel
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Article
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2002
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John Wiley and Sons
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English
β 86 KB
CdSe/ZnSe quantum structures grown on GaAs(001) by molecular beam epitaxy (MBE) were investigated by temperature dependent, time-resolved photoluminescence spectroscopy. A strong influence of the conditions during cap layer growth on the optical properties was found. Using conventional MBE excitons